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| 項目 | 內(nèi)容 | 規(guī)格概述 |
| 1 | 波長范圍 | 420~1000nm |
| 2 | Resolution | 1 nm |
| 3 | 膜厚測定范圍 | 250 A- 20 um |
| 4 | 膜厚測定精度 | T=±5A, N=±0.02 based on SiO2 1100A standard wafer |
| 5 | 膜厚測定重復(fù)性 | SR Thickness repeatability: ≤ 1? (1?) (at 1100?, SiO2/Si) |
| 6 | 測定光源 | 鹵素?zé)襞?/span>(含 Constant Current Power Supply) |
| 7 | 透明基板里面反射補正機能 | 包括透明基板背后反射的修正(軟件) |
| 8 | 測定SPOT徑(Spot Size ) | 50 um Diameter ( 20 X Objective ) , can be smaller with less signal / noise ratio |
| 9 | Tact time | 2S（測試1S+分析1S） |
