引入超快光電二極管的UPD系列
UPD的系列超快光電探測器是于從直流到25 GHz的光波形的測量。各種型號(hào)均上升時(shí)間短15 ps和覆蓋的光譜范圍從170到2600納米。
所有光電二極管被封閉在緊湊和固體鋁外殼和可以與電池或外部電源被偏置。
硅型光電檢測器的紫外擴(kuò)展版本是覆蓋光譜范圍從170到1100納米的商業(yè)產(chǎn)品。
的*UV敏感的InGaAs光電檢測另一種類型的可用于在范圍檢測激光脈沖從350至1700納米，因此具有市售的最寬的光譜范圍和速度。
的阻抗匹配和國家的的微波技術(shù)保證沒有任何振鈴或文物脈沖形式測量。顧客可以自由地使用50Ω端接電阻為速度操作，或用于獲得大的信號(hào)的高阻抗負(fù)載。這保證了不同的應(yīng)用的靈活性。
在我們的組合 的BBA系列寬帶高增益放大器，高速光電檢測器是有利的替代昂貴和麻煩的雪崩光電二極管。
該UPD系列高速光電探測器是激光和光子學(xué)研究*的工具。
的光電二極管的特征
超高速運(yùn)行
上升時(shí)間：從15 ps的開始
帶寬：高達(dá)25 GHz的
光譜范圍：170 - 2600納米（紫外到紅外）
緊湊的設(shè)計(jì)
電池或外部電源
模型自由空間光束，
或FC / PC插座
或尾纖與SM光纖
的光電二極管的應(yīng)用
脈沖形態(tài)測量
脈沖寬度測量
精確同步
模式跳動(dòng)監(jiān)控
外差測量
新光電型號(hào)：更快的上升時(shí)間和更寬的波長范圍
UPD-15-IR2-FC：超快的InGaAs PIN探測器，上升時(shí)間<15 ps的，帶寬> 25 GHz的頻譜范圍800 - 1700納米，與FC / APC連接器光纖耦合輸入
UPD-35-IR2-P，UPD-35-IR2-D：超快的InGaAs PIN光電探測器，上升時(shí)間<35 ps的，帶寬> 10 GHz的頻譜范圍800 - 1700納米，拋光或彌漫性窗口
UPD-35-UVIR-P，UPD-35-UVIR-D：超快的InGaAs PIN光電探測器，上升時(shí)間<35 ps的，帶寬> 10 GHz時(shí)，光譜范圍350 - 1700納米，拋光或彌漫性窗口
UPD-50-SP，UPD-50-SD，UPD-50-UD，UPD-50-UP：超快硅PIN光電探測器，上升時(shí)間50 ps的，下降時(shí)間50 ps的，帶寬> 7 GHz的
頻譜范圍170 - 1100納米或320 - 1100納米，拋光或彌漫性窗口
UPD-100-IR1-P：超快光電探測器戈，上升時(shí)間<100 ps的，脈沖寬度（FWHM）300 PS，光譜范圍400 - 2000納米
UPD-3N-IR2-P：快速砷化銦鎵光電探測器，紅外擴(kuò)展范圍可達(dá)2.1＆微M，上升時(shí)間150 ps的
UPD-5N-IR2-P：快速砷化銦鎵光電探測器，紅外擴(kuò)展范圍可達(dá)2.6＆微M，上升時(shí)間為200 ps
Introducing the UPD Series of Ultrafast Photodiodes
The UPD series of ultrafast photodetectors are best suited for measurement of optical waveforms from DC to 25 GHz. Various models feature rise times as short as 15 ps ａnd cover the spectral range from 170 to 2600 nm.
All photodiodes are enclosed in compact and solid aluminum housings and can be biased with a battery or an external power supply.
The UV-extended versions of the silicon type photodetectors are the only commercial products that cover the spectral range from 170 to 1100 nm.
Another type of unique UV-sensitive InGaAs photodetectors can be used for detecting laser pulses in the range from 350 to 1700 nm, thus having the widest spectral range and the highest speed commercially available.
Perfect impedance matching and state-of-the-art microwave technology assure pulse form measurements without any ringing or artefacts. The customer is free to use a 50 Ω terminating resistor for highest speed operation, or a high impedance load for obtaining large signals. This guarantees maximum flexibility for diverse applications.
In combination with our BBA series of widebａnd high-gain amplifiers, the high-speed photodetectors are an advantageous alternative to the expensive and cumbersome avalanche photodiodes.
The UPD series high-speed photodetectors are indispensable tools for laser and photonics research.
Features of the Photodiodes
Ultra High-Speed Operation
Rise Times: starting from 15 ps
Bandwidths: up to 25 GHz
Spectral Ranges: 170 - 2600 nm (UV to IR)
Compact Design
Battery or External Power Supply
Models for Free-Space Beam,
or with FC/PC Receptacle
or Pigtailed with SM Fiber
Applications of the Photodiodes
Pulse Form Measurements
Pulse Duration Measurements
Precise Synchronization
Mode Beating Monitoring
Heterodyne Measurements
New Photodetector Models Available: Faster Rise Times & Wider Wavelength Ranges
UPD-15-IR2-FC: Ultrafast InGaAs PIN photodetector, rise time < 15 ps, bandwidth > 25 GHz, spectral range 800 - 1700 nm, fiber-coupled input with FC/APC connector
UPD-35-IR2-P, UPD-35-IR2-D: Ultrafast InGaAs PIN photodetectors, rise time < 35 ps, bandwidth > 10 GHz, spectral range 800 - 1700 nm, with polished or diffuse window
UPD-35-UVIR-P, UPD-35-UVIR-D: Ultrafast InGaAs PIN photodetectors, rise time < 35 ps, bandwidth > 10 GHz, spectral range 350 - 1700 nm, with polished or diffuse window
UPD-50-SP, UPD-50-SD, UPD-50-UD, UPD-50-UP: Ultrafast Si PIN photodetector, rise time 50 ps, fall time 50 ps, bandwidth > 7 GHz,
spectral range 170 - 1100 nm or 320 - 1100 nm, with polished or diffuse window
UPD-100-IR1-P: Ultrafast Ge photodetector, rise time < 100 ps, pulsewidth (FWHM) 300 ps, spectral range 400 - 2000 nm
UPD-3N-IR2-P: Fast InGaAs photodetector, extended infrared range up to 2.1 µm, rise time 150 ps
UPD-5N-IR2-P: Fast InGaAs photodetector, extended infrared range up to 2.6 µm, rise time 200 ps
